V-I Characteristics of Diode
To determine the V-I Characteristics of a pn junction semiconductor diode
To draw the characteristics means behavior of current in forward and reverse bias of a semiconductor junction diode. This semiconductor diode either made by silicon or germanium which have atomic number Z=14 or Z=32 respectively. There are some questions related to this science experiment, these can help you to understand its working better.
If you found any question unanswerable you can ask me, I will help you.
1Q. What is semiconductor material?
2Q. What is the difference between intrinsic and extrinsic semiconductor?
3Q. What are trivalent and pentavalent impurities?
4Q. Tell names at least of three most used tri- and pentavalent impurities?
5Q. What is the depletion region how it is formed?
6Q. What is diffusion of charge?
7Q. What do you mean by the majority and minority charge carrier?
8Q. In n-type semiconductor what is majority charge carrier?
9Q. In n-type semiconductor what are minority charge carrier?
10Q. In p-type semiconductor what is majority charge carrier?
11Q.In p-type semiconductor what are minority charge carrier?
12Q. What do you understand by forward and reverse bias, show it by circuit diagram?
13Q. What is knee voltage for silicon and germanium semiconductors?
14Q. How did semiconductor atoms join with the neighbor atom?
15Q. Which bond semiconductor atoms develop among them for stable configuration.
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